8legs: Institute of metal research

#1 out of 158.96%

Scientists develop an ultra-fast 2D semiconductor growth process

Chinese researchers report a wafer-scale growth method for 2D tungsten silicon nitride that is about 1,000x faster than usual techniques.
The new method increased film production speed about 1,000 times over conventional approaches.
The substrate uses a liquid gold and tungsten bilayer to enable growth of the films.
The films reached dimensions about 1.4 by 0.7 inches, signaling progress toward scalable manufacturing.
Moore's Law remains challenged as transistor miniaturization hits quantum and heat limits.
2D semiconductors are seen as key candidates for post-Moore devices despite production challenges.
Developers caution that cost and scalability remain major obstacles for commercial deployment.
Researchers aim for tunable doping properties in the 2D films.
The study contributes to the broader effort to extend chip performance beyond silicon.
Industry experts recognize the novelty but emphasize the road to mass production.

Vote 0